■ The BT (bias thermal stress test) test can be performed by applying high voltage to SIC / HV FET / IGBT and other power devices

■ Used to evaluate high voltage equipment used in automobiles, railways, etc

■ Gate BT 1nA to 10μA

■ Drain BT test 1μA to 30mA

■ /Id measurements from 1μA to 30mA

■ /Vg monitor -30V to +30V

■ The voltage can be up to 2000V and 16CH / unit can be applied simultaneously

■ Gate application ±30V 30mA (in-unit power supply)

■ Drain application high voltage 2kV 30mA (external power supply)

■ Drain application low voltage +30V 30mA (in-unit power supply)